3 February 2000 Optimization of ZEP7000 writing and development conditions
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Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377106
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
This paper describes the optimization of the key parameters (exposure and development) needed to reach CD uniformity below 20 nm necessary for 150 nm generation devices. The three factors (exposure dose, spot size and development time) were investigated by design of experiment (DOE). ZEP 7000 is an e-beam dry-etchable resist which requires higher dose than PBS and EBR-9 HS-31 usual e-beam resists. Therefore the exposure was made on a MEBES 4500 system combined with multipass gray writing strategy. A puddle development was done on a STEAG ASE500 tool. CD measurements have been done after development on LEICA IPRO system using reflective light in order to eliminate the error induced by etching. The DOE results have been interpreted separately on the X and Y axis. The results of the DOE have been verified by measuring the edge resist slope with a scanning electron microscope and by measuring chrome CD uniformity after dry etching and stripping.
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Daniel Courboin, Daniel Courboin, Philippe Gervot, Philippe Gervot, Chantal Gayou, Chantal Gayou, Patrick Montarou, Patrick Montarou, } "Optimization of ZEP7000 writing and development conditions", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377106; https://doi.org/10.1117/12.377106
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