21 July 2000 Beam-monitoring system using microapertures for electron-beam lithography
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Abstract
A new beam-monitoring system for electron-beam lithography is proposed, which can be used for the variably shaped beam (VSB) method, the character projection (CP) method and the electron- beam mask (EB mask) projection method. The system is composed of micro-apertures and a detector placed below the micro- aperture, which is installed at a focal plane of a mask writer. The micro-apertures are formed on a 1-micrometer-thick Si film on which two 200-nm-thick W layers are deposited. A shaped beam is scanning over the micro-aperture, and the electrons that pass through the micro-aperture are directly detected with the detector, so that the two-dimensional shape and size of the beam are measured. The contrast and the signal-to-noise ratio obtained by this system are greatly superior to those obtained by the conventional mark-scanning method.
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Jun Takamatsu, Naoharu Shimomura, Hitoshi Sunaoshi, Kiyoshi Hattori, Munehiro Ogasawara, Tetsuro Nakasugi, "Beam-monitoring system using microapertures for electron-beam lithography", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390105; https://doi.org/10.1117/12.390105
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