21 July 2000 CA resist with high sensitivity and sub-100-nm resolution for advanced mask and device making
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Recently, there is significant interest in using CA resists for electron beam (E-Beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, resolution, and sensitivity. However, most of the commercially available CA resists have the concern of airborne base contaminants and sensitivity to PAB and/or PEB temperatures. In this presentation, we will discuss a new improved ketal resist system referred to as KRS-XE which exhibits excellent lithography, is robust toward airborne base, compatible with 0.263 N TMAH aqueous developer and exhibits a large PAB/PEB latitude. With the combination of a high performance mask making E-beam exposure tool, high kV (75 kV) shaped beam system EL4+ and the KRS-XE resist, we have printed 75 nm lines/space features with excellent profile control at a dose of 13 (mu) C/cm2 at 75 kV. The shaped beam vector scan system used here provides an unique property in resolving small features in lithography and throughput. Overhead in EL4+ limits the systems ability to fully exploit the sensitivity of the new resist for throughput. The EL5 system, currently in the build phase, has sufficiently low overhead that it is projected to print a 4X, 16G, DRAM mask with OPC in under 3 hours with the CA resist. We will discuss the throughput advantages of the next generation EL5 system over the existing EL4+. In addition we will show the resolution of KRS-XE down to 70 nm using the PREVAIL projection printing system.
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Ranee W. Kwong, Ranee W. Kwong, Wu-Song Huang, Wu-Song Huang, John G. Hartley, John G. Hartley, Wayne M. Moreau, Wayne M. Moreau, Christopher F. Robinson, Christopher F. Robinson, Marie Angelopoulos, Marie Angelopoulos, Christopher Magg, Christopher Magg, Mark Lawliss, Mark Lawliss, } "CA resist with high sensitivity and sub-100-nm resolution for advanced mask and device making", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390071; https://doi.org/10.1117/12.390071

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