21 July 2000 Data of scattered electron characteristics in 100-kV EB stepper
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Abstract
Nikon is developing an Electron Beam (EB) stepper as one of the next-generation lithography systems for feature sizes of less than 100 nm. As a reticle for the EB stepper using a high power EB (acceleration voltage: 100 kV, current on reticle: 100 (mu) A), a scattering stencil reticle with a grid-grillage structure has been investigated, EB projection experimental column which operates a high power EB was constructed. Some experimental data of scattered electron characteristics using the EB projection experimental column are given as follows: (1) Scattering contrast of 99.9% can be obtained using 100 kV electron beam (membrane thickness; 2 micrometer, aperture half angle onto reticle; 2 mrad). (2) Changes of resist pattern width of 1:1 and 1:2 lines and spaces are around 40% and around 20% respectively due to the proximity effects by backscattered electrons form the silicon substrate. (3) Contrast of EB mark detection for the system calibration, the reticle alignment, and the wafer registration is obtained. Comparing with the values that be obtained by theoretical calculation, some of experimental data gave good agreement.
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Kenji Morita, Takehisa Yahiro, Sumito Shimizu, Hajime Yamamoto, Noriyuki Hirayanagi, Tomoharu Fujiwara, Syouhei Suzuki, Hiroyasu Shimizu, Shintaro Kawata, Teruaki Okino, Kazuaki Suzuki, "Data of scattered electron characteristics in 100-kV EB stepper", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390111; https://doi.org/10.1117/12.390111
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