21 July 2000 Data of scattered electron characteristics in 100-kV EB stepper
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Nikon is developing an Electron Beam (EB) stepper as one of the next-generation lithography systems for feature sizes of less than 100 nm. As a reticle for the EB stepper using a high power EB (acceleration voltage: 100 kV, current on reticle: 100 (mu) A), a scattering stencil reticle with a grid-grillage structure has been investigated, EB projection experimental column which operates a high power EB was constructed. Some experimental data of scattered electron characteristics using the EB projection experimental column are given as follows: (1) Scattering contrast of 99.9% can be obtained using 100 kV electron beam (membrane thickness; 2 micrometer, aperture half angle onto reticle; 2 mrad). (2) Changes of resist pattern width of 1:1 and 1:2 lines and spaces are around 40% and around 20% respectively due to the proximity effects by backscattered electrons form the silicon substrate. (3) Contrast of EB mark detection for the system calibration, the reticle alignment, and the wafer registration is obtained. Comparing with the values that be obtained by theoretical calculation, some of experimental data gave good agreement.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Morita, Kenji Morita, Takehisa Yahiro, Takehisa Yahiro, Sumito Shimizu, Sumito Shimizu, Hajime Yamamoto, Hajime Yamamoto, Noriyuki Hirayanagi, Noriyuki Hirayanagi, Tomoharu Fujiwara, Tomoharu Fujiwara, Syouhei Suzuki, Syouhei Suzuki, Hiroyasu Shimizu, Hiroyasu Shimizu, Shintaro Kawata, Shintaro Kawata, Teruaki Okino, Teruaki Okino, Kazuaki Suzuki, Kazuaki Suzuki, } "Data of scattered electron characteristics in 100-kV EB stepper", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390111; https://doi.org/10.1117/12.390111


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