21 July 2000 Delineation performances of advanced 100-kV EB writer on x-ray membrane mask
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The keys to precision x-ray mask fabrication are the EB mask writer and the process of writing on a thin membrane. This paper concerns the delineation performance for 100 kV EB writing on x-ray membrane mask. We installed and evaluated an advanced EB mask writer, the EB-X3, which features an accelerating voltage of 100 kV and a 5-axes laser interferometer stage employing a laser measurement system with a resolution of 0.6 nm for high resolution and accuracy. The stable 100 kV EB has a good resolution around 50 nm and a beam address of 1 nm, which provide a repeatability of mark detection within 4 nm. As a result, an absolute image placement accuracy within 15 nm was obtained for 1G-bit level ULSI patterns. In addition, the combination of 100 kV EB and membrane process was found to reduce proximity effects. By several improvements including higher-order height correction and membrane process refinement, the final target of an absolute image placement error within 10 nm and a CD accuracy within 8 nm should be achieved in FY2000.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshinori Nakayama, Yoshinori Nakayama, Hajime Aoyama, Hajime Aoyama, Shinji Tsuboi, Shinji Tsuboi, Hiroshi Watanabe, Hiroshi Watanabe, Yukiko Kikuchi, Yukiko Kikuchi, Mizunori Ezaki, Mizunori Ezaki, Yasuji Matsui, Yasuji Matsui, Tetsuo Morosawa, Tetsuo Morosawa, Kenichi Saito, Kenichi Saito, Shigehisa Ohki, Shigehisa Ohki, Tadahito Matsuda, Tadahito Matsuda, } "Delineation performances of advanced 100-kV EB writer on x-ray membrane mask", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390033; https://doi.org/10.1117/12.390033


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