Recent developments in electron-beam (e-beam) systems and mask-writing strategies facilitate pattern generation for the 130-nm IC generation. The MEBESR 5500 pattern generation system incorporates a high-dose electron optical system and a high-throughput writing strategy, Multipass Gray-II (MPG-II). We evaluate the effectiveness of these innovations by three criteria: improved resolution, improved critical dimension (CD) control, and increased throughput. The conclusions of this paper are based on results from extensive modeling, test masks, and factory acceptance masks. Mask resist choice and processing have been optimized for the MEBES 5500 system. A consequence of these improvements is greater productivity for 150 nm devices and early development of 130 nm devices. The MEBES 5500 system uses a high-dose gun and electron optical system. The maximum current density that can be delivered to the mask is 800 A/cm2, twice the value of previous MEBES systems. Without loss of throughput, it is possible to increase the dose deposited in the resist, while using smaller e-beam sizes. These capabilities are exploited to improve printing of submicrometer features, including 200 nm-scale optical proximity correction (OPC) patterns. At small data addresses (<17.1 nm), the MPG-II writing strategy provides twice the throughput of the existing multipass gray (MPG) strategy with the same instrument, and 16X the throughput of traditional single-pass printing (SPP) with the MEBES 4500 system. The fundamentals of the MPG-II strategy are described, as well as throughput and lithographic results.