21 July 2000 Evaluation of negative DUV resist UVN30 for electron-beam exposure of NGL masks
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A negative tone, chemically amplified deep ultraviolet resist, ShipleyR UVN30, has been evaluated for use in NGL mask fabrication and direct write applications. This resist displayed excellent exposure latitude and resolution for both dense and isolated features. At optimum conditions 50 nm isolated lines and 60 nm dense lines resolved in a 300 nm thick film. Exposure dose latitude was 32%. Resist coat shelf life tests produced CD variations of 5 nm after 1 week and 10 nm after 3 months. A 66 hour post exposure bake delay in vacuum produced a 9 nm CD variation. PEB temperature sensitivity was 3 nm per degree Celsius. By selecting appropriate process conditions exposure latitude and resolution were optimized while decreasing linearity and line edge roughness performance. This paper reviews the test conditions for performing the optimization experiments and discuses the potential of using this resist for both advanced mask fabrication and direct write application.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zorian S. Masnyj, Zorian S. Masnyj, Pawitter J. S. Mangat, Pawitter J. S. Mangat, Eric S. Ainley, Eric S. Ainley, Kevin J. Nordquist, Kevin J. Nordquist, Douglas J. Resnick, Douglas J. Resnick, } "Evaluation of negative DUV resist UVN30 for electron-beam exposure of NGL masks", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390090; https://doi.org/10.1117/12.390090


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