21 July 2000 Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts
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Abstract
Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiation power of about 40 W to fulfill the prerequisites for an economical wafer throughput up to 80 wafer/hour with a wafer size of 300 mm in diameter. Laser produced plasmas and gas discharge based plasmas are under investigation by several working groups as EUV-sources for this purpose. In this paper the achieved results for the different sources are discussed regarding their emission characteristics in comparison to the demands of EUV lithography (EUVL).
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Guido Schriever, Guido Schriever, Manfred Rahe, Manfred Rahe, Willi Neff, Willi Neff, Klaus Bergmann, Klaus Bergmann, Rainer Lebert, Rainer Lebert, Hans Lauth, Hans Lauth, Dirk Basting, Dirk Basting, } "Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390051; https://doi.org/10.1117/12.390051
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