21 July 2000 Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts
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Abstract
Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiation power of about 40 W to fulfill the prerequisites for an economical wafer throughput up to 80 wafer/hour with a wafer size of 300 mm in diameter. Laser produced plasmas and gas discharge based plasmas are under investigation by several working groups as EUV-sources for this purpose. In this paper the achieved results for the different sources are discussed regarding their emission characteristics in comparison to the demands of EUV lithography (EUVL).
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Guido Schriever, Guido Schriever, Manfred Rahe, Manfred Rahe, Willi Neff, Willi Neff, Klaus Bergmann, Klaus Bergmann, Rainer Lebert, Rainer Lebert, Hans Lauth, Hans Lauth, Dirk Basting, Dirk Basting, "Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390051; https://doi.org/10.1117/12.390051
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