21 July 2000 Nikon EB stepper: its system concept and countermeasures for critical issues
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Abstract
The imaging concept of electron projection lithography (EPL) with silicon stencil reticle is explained. A silicon membrane thickness of 1 - 4 micrometer is suitable for the reticle. A scattering contrast of greater than 99% is expected. Nikon EB stepper's dynamic writing strategy of discrete exposure on a sub-field by sub-field basis with deflection control of the electron beam is explained. The basic system configuration of EB stepper is introduced. Examples of error budget for CD variation and Overlay/Stitching are shown. Nikon's policy for countermeasures for critical issues such as proximity effect correction, sub-field/complementary stitching and wafer heating influence are explained. For extensibility down to 70 nm and below, both exposure tool and reticle should be improved.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuaki Suzuki, Kazuaki Suzuki, Tomoharu Fujiwara, Tomoharu Fujiwara, Kazunari Hada, Kazunari Hada, Noriyuki Hirayanagi, Noriyuki Hirayanagi, Shintaro Kawata, Shintaro Kawata, Kenji Morita, Kenji Morita, Kazuya Okamoto, Kazuya Okamoto, Teruaki Okino, Teruaki Okino, Sumito Shimizu, Sumito Shimizu, Takehisa Yahiro, Takehisa Yahiro, } "Nikon EB stepper: its system concept and countermeasures for critical issues", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390057; https://doi.org/10.1117/12.390057
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