21 July 2000 Processing latitude study on x-ray phase-shifting masks
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Abstract
Phase-shifting masks have been applied in optical lithography and various phase-shifting techniques in X-ray Lithography (XRL) have been demonstrated. In this study, we compare different phase-shifting technologies for XRL, such as clear phase mask, attenuated phase-shifting mask and alternating aperture phase-shifting mask through computer simulation. The control of critical dimension is of primary importance as the CD shrinks to the sub-100 nm region. We have reported our design and fabrication of a more robust X-ray Phase Mask, which is capable of sub-70 nm imaging. The processing latitude of this design is investigated in terms of the X-ray source broadening, phase-shifter uniformity, mask-to-wafer gap and sidewall slope of the phase-shifter. The latitude is compared with those results from an attenuated phase shifting mask and an alternating aperture phase shifting mask.
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Lei Yang, Mumit Khan, James Welch Taylor, Yuli Vladimirsky, Niru V. Dandekar, "Processing latitude study on x-ray phase-shifting masks", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390092; https://doi.org/10.1117/12.390092
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