21 July 2000 Processing latitude study on x-ray phase-shifting masks
Author Affiliations +
Phase-shifting masks have been applied in optical lithography and various phase-shifting techniques in X-ray Lithography (XRL) have been demonstrated. In this study, we compare different phase-shifting technologies for XRL, such as clear phase mask, attenuated phase-shifting mask and alternating aperture phase-shifting mask through computer simulation. The control of critical dimension is of primary importance as the CD shrinks to the sub-100 nm region. We have reported our design and fabrication of a more robust X-ray Phase Mask, which is capable of sub-70 nm imaging. The processing latitude of this design is investigated in terms of the X-ray source broadening, phase-shifter uniformity, mask-to-wafer gap and sidewall slope of the phase-shifter. The latitude is compared with those results from an attenuated phase shifting mask and an alternating aperture phase shifting mask.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Yang, Mumit Khan, James Welch Taylor, Yuli Vladimirsky, and Niru V. Dandekar "Processing latitude study on x-ray phase-shifting masks", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390092; https://doi.org/10.1117/12.390092


SNR200 chemically amplified resist optimization
Proceedings of SPIE (July 06 1997)
ACLV control in x-ray lithography
Proceedings of SPIE (June 04 1998)
X-ray phase mask: nanostructures
Proceedings of SPIE (July 06 1997)
Bright Discharge Plasma Sources For X-Ray Lithography
Proceedings of SPIE (June 19 1985)

Back to Top