Paper
21 July 2000 Progress in Mo/Si multilayer coating technology for EUVL optics
Eric Louis, Andrey E. Yakshin, Peter C. Goerts, Sebastian Oestreich, R. Stuik, Edward L. G. Maas, M. J. H. Kessels, Fred Bijkerk, Markus Haidl, Stefan Muellender, Michael Mertin, Detlef Schmitz, Frank Scholze, Gerhard Ulm
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Abstract
Extensive optimization on the fabrication of Mo/Si multilayer systems is carried out at the FOM Institute Rijnhuizen using e-beam evaporation. The process is being optimized including parameters such as variation of the mirror's center wavelength, the metal fraction, deposition parameters, and the layer composition. Reflectivities of 69.5% are demonstrated at normal incidence, with values of 67 to 69% being routinely achieved, demonstrating the capabilities of the deposition process. Some evidence of smoothening to interface roughness values lower than the roughness of the initial substrate is given. Furthermore, investigation of the temporal behavior of the coatings does not indicate any loss of reflectivity over an eight-month period. An analysis of the multilayer composition and the interface roughness is given. The reflectivity measurements have been carried out at the PTB facilities at the electron storage rings BESSY I and BESSY II in Berlin. The results of measurements at both facilities are found to be identical and accuracy is discussed in detail.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Louis, Andrey E. Yakshin, Peter C. Goerts, Sebastian Oestreich, R. Stuik, Edward L. G. Maas, M. J. H. Kessels, Fred Bijkerk, Markus Haidl, Stefan Muellender, Michael Mertin, Detlef Schmitz, Frank Scholze, and Gerhard Ulm "Progress in Mo/Si multilayer coating technology for EUVL optics", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390077
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KEYWORDS
Reflectivity

Coating

Multilayers

Extreme ultraviolet lithography

Reflectometry

Mirrors

Extreme ultraviolet

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