Translator Disclaimer
21 July 2000 Resist technologies for ion projection lithography (IPL) stencil maskmaking
Author Affiliations +
Abstract
Corresponding to characteristics and manufacturing processes of IPL stencil masks, requirements of used resist technologies are determined. Two thin layer imaging (TLI) techniques, the single layer top surface imaging (TSI) and the bilayer CARL (chemical amplification of resist line) have been investigated and compared for stencil mask making. Especially the process design of CARL is discussed in detail. Additionally, a possible process integration of the carbon layer, that is deposited on the stencil mask and protects the membrane against damaging due to ion bombardment, is presented. Finally, results of silicon etching and complete manufactured stencil masks using the developed resist technologies are demonstrated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathias Irmscher, Joerg Butschke, Klaus Elian, Bernd Hoefflinger, Karl Kragler, Florian Letzkus, Joerg Ochsenhirt, Christian Reuter, and Reinhard Springer "Resist technologies for ion projection lithography (IPL) stencil maskmaking", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390072
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

3D lithography for implant applications
Proceedings of SPIE (March 28 2013)
Low out-gassing organic spin-on hardmask
Proceedings of SPIE (March 25 2008)
Spin-on trilayer approaches to high NA 193nm lithography
Proceedings of SPIE (April 01 2007)
Stencil mask technology for ion beam lithography
Proceedings of SPIE (December 17 1998)

Back to Top