21 July 2000 Resist technologies for ion projection lithography (IPL) stencil maskmaking
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Corresponding to characteristics and manufacturing processes of IPL stencil masks, requirements of used resist technologies are determined. Two thin layer imaging (TLI) techniques, the single layer top surface imaging (TSI) and the bilayer CARL (chemical amplification of resist line) have been investigated and compared for stencil mask making. Especially the process design of CARL is discussed in detail. Additionally, a possible process integration of the carbon layer, that is deposited on the stencil mask and protects the membrane against damaging due to ion bombardment, is presented. Finally, results of silicon etching and complete manufactured stencil masks using the developed resist technologies are demonstrated.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathias Irmscher, Mathias Irmscher, Joerg Butschke, Joerg Butschke, Klaus Elian, Klaus Elian, Bernd Hoefflinger, Bernd Hoefflinger, Karl Kragler, Karl Kragler, Florian Letzkus, Florian Letzkus, Joerg Ochsenhirt, Joerg Ochsenhirt, Christian Reuter, Christian Reuter, Reinhard Springer, Reinhard Springer, "Resist technologies for ion projection lithography (IPL) stencil maskmaking", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390072; https://doi.org/10.1117/12.390072


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