21 July 2000 Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering
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Abstract
Modified molybdenum/silicon (Mo/Si) multilayers were deposited by ion beam sputtering (IBS). We obtained low-stress multilayers by sub-multilayering each Mo-layer into a trilayer of Mo/Ru (ruthenium)/Mo, and argon (Ar) ion beam polishing (IBP) after each Mo-layer deposition. Conventional Mo/Si multilayers have compressive stress of about -450 MPa, while the low-stress multilayers which we have developed have tensile stress of +14 MPa, on average. The method used is not a heating process such as annealing, thus it does not cause irreversible deformation of the precisely-figured mirror substrates of optics. It is expected that the application of low-stress multilayers to mirrors for reflection of light with a wavelength of 13 nm will make it possible to compose optics without worsening optical properties due to deformation of substrates by the stress of multilayer coatings.
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Masayuki Shiraishi, Masayuki Shiraishi, Wakana Ishiyama, Wakana Ishiyama, Tetsuya Oshino, Tetsuya Oshino, Katsuhiko Murakami, Katsuhiko Murakami, } "Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390102; https://doi.org/10.1117/12.390102
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