21 July 2000 Thermomechanical modeling of the SCALPEL mask during exposure
Author Affiliations +
Abstract
Thermal deformations of lithographic masks during the exposure process may become an important consideration for all candidate Next Generation Lithography technologies. In,the Electron Projection Lithography exposure process, an electron beam passes through thin membrane sections of the mask scattering the electrons of the pattern area. A small fraction of the e-beam energy is absorbed in the membranes producing a local temperature rise. This temperature rise produces thermomechanical distortions that can result in both image placement errors and image blur. Finite element methods have been used to model the exposure process of the Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) mask. Thermal and structural finite element models have been generated to simulate the response of the SCALPEL mask during the exposure process and predict the resulting thermomechanical distortions. The results of these finite element analyses and the contributions of the thermal deformations to image placement error are presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl J. Martin, Carl J. Martin, Roxann L. Engelstad, Roxann L. Engelstad, Edward G. Lovell, Edward G. Lovell, James Alexander Liddle, James Alexander Liddle, } "Thermomechanical modeling of the SCALPEL mask during exposure", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390094; https://doi.org/10.1117/12.390094
PROCEEDINGS
11 PAGES


SHARE
RELATED CONTENT

SCALPEL mask blank fabrication
Proceedings of SPIE (August 30 1999)
Image size control in next generation lithography masks
Proceedings of SPIE (July 21 2000)
SCALPEL system
Proceedings of SPIE (December 07 1994)
Low-energy e-beam proximity projection lithography
Proceedings of SPIE (June 25 1999)
Techniques to inspect SCALPEL masks
Proceedings of SPIE (December 30 1999)

Back to Top