Thermomechanical simulations for microbeam reduction lithography

Gary A. Frisque; Po-Tung Lee; Edward G. Lovell; Roxann L. Engelstad; Ka-Ngo Leung; Vinh V. Ngo; Karen L. Scott

doi:10.1117/12.390097

21 July 2000 Thermomechanical simulations for microbeam reduction lithography

Gary A. Frisque, Po-Tung Lee, Edward G. Lovell, Roxann L. Engelstad, Ka-Ngo Leung, Vinh V. Ngo, Karen L. Scott

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390097
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A novel ion projection lithography (IPL) technique called Maskless Micro-ion-beam Reduction Lithography (MMRL) is currently being developed at the Lawrence Berkeley National Laboratory. This system completely eliminates the first stage of the conventional IPL system that contains the complicated beam optics design in front of the stencil mask. The MMRL system employs an RF-driven multicusp source, a universal pattern generator in place of the conventional stencil mask, and an accelerator column for beam reduction and scanning. The pattern generator is much thicker (40 micrometer) than conventional stencil masks and therefore can provide considerable mechanical stability. Positive hydrogen or helium ions generated in the multicusp source will impinge on the pattern generator with energy on the order of 40 eV and produce minimal heat load and sputtering effects. Ultra-low thermomechanical distortions are predicted by the finite element heat transfer simulations. Additional distortion minimization has also been demonstrated by optimizing the membrane geometry with respect to the pattern area. Descriptions of the MMRL ion-beam source and results for each modeling activity are presented.

Citation Download Citation

Gary A. Frisque, Po-Tung Lee, Edward G. Lovell, Roxann L. Engelstad, Ka-Ngo Leung, Vinh V. Ngo, and Karen L. Scott "Thermomechanical simulations for microbeam reduction lithography", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390097

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