21 July 2000 Xenon liquid-jet laser plasma source for EUV lithography
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Abstract
We describe a laser-plasma source based on a cryogenic xenon liquid-jet target suitable for extreme ultraviolet (EUV) projection lithography. Recent improvements in the stability of the xenon jet allows efficient laser-plasma operation several millimeters away from the nozzle orifice. We present the first preliminary laser-to-EUV conversion efficiencies, although under non-optimized conditions, for the source.
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Bjoern A. M. Hansson, Bjoern A. M. Hansson, Magnus Berglund, Magnus Berglund, Oscar E. Hemberg, Oscar E. Hemberg, Hans M. Hertz, Hans M. Hertz, } "Xenon liquid-jet laser plasma source for EUV lithography", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390049; https://doi.org/10.1117/12.390049
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