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2 June 2000 193-nm scanner characterization by SEM and electrical CD measurements
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Abstract
193 nm lithography is expected today to be an emerging solution for the development and the production of future integrated circuits based on sub 150 nm design rules. However the characterization and the evaluation of these tools require a lot of effort due to the 193 nm resist behavior during SEM observations. This paper presents the process flow chart to allow the evaluation of a ASM-L 5500/900 193 nm scanner by electrical measurement and the stack used for this study. After the validation of this flow chart, this work gives an overview of the ASM-L 5500/900 performances.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Pain, Yorick Trouiller, Alexandra Barberet, O. Guirimand, Gilles L. Fanget, N. Martin, Yves Quere, M. E. Nier, Emile Lajoinie, Didier Louis, Michel Heitzmann, P. Scheiblin, and A. Toffoli "193-nm scanner characterization by SEM and electrical CD measurements", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386499
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