2 June 2000 Characterization of wafer-induced shift on overlay target using post- etch artifact wafers
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Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000); doi: 10.1117/12.386532
Event: Microlithography 2000, 2000, Santa Clara, CA, United States
Abstract
In this paper, I will present a methodology of using post etch wafers with multiple overlay targets to characterize the Wafer Induced Shift (WIS). The overlay targets consists of both embedded and exposed structures that represent the post develop and post etch measurements respectively. This methodology provides a metric to quantify the WIS in the process, defined as the difference between post develop measurement, or develop check (DC), and post etch measurement, or final check (FC). It also allows us to characterize the overlay tool, the overlay target and the process variability altogether and to improve the correlation between DC and FC measurements.
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Alan S. Wong, "Characterization of wafer-induced shift on overlay target using post- etch artifact wafers", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386532; https://doi.org/10.1117/12.386532
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KEYWORDS
Overlay metrology

Semiconducting wafers

Etching

Metrology

Optical alignment

Chemical mechanical planarization

Thin films

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