2 June 2000 Linewidth measurement intercomparison on a BESOI sample
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Abstract
The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons between techniques which rely upon fundamentally different measurement physics can play an important role in model verification. We report here such an intercomparison. The average linewidth of a test pattern on a BESOI (Bonded and Etched-back Silicon on Insulator) sample, which is single crystal silicon with a buried insulating oxide, was measured using scanning electron microscopy (SEM) and electrical critical dimension (ECD) techniques. The higher conductivity of the BESOI sample compared to a previously measured SIMOX (another silicon on insulator technology) sample reduced the ECD uncertainty. Unexpected features in the SEM image were fit by modeling the cross sectional geometry of the line as a skewed trapezoid with deviations of a few tenths of a degree from the expected 90 degree angles. The SEM and ECD results differed by 0.67% of the electrical tap spacing, a nominal difference of 55 nm. This is larger than can be accounted for by known sources of measurement uncertainty.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John S. Villarrubia, John S. Villarrubia, Andras E. Vladar, Andras E. Vladar, Jeremiah R. Lowney, Jeremiah R. Lowney, Michael T. Postek, Michael T. Postek, Richard A. Allen, Richard A. Allen, Michael W. Cresswell, Michael W. Cresswell, Rathindra N. Ghoshtagore, Rathindra N. Ghoshtagore, } "Linewidth measurement intercomparison on a BESOI sample", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386488; https://doi.org/10.1117/12.386488
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