Optimum design for optical proximity correction in submicron bipolar technology using critical shape error analysis

Graham G. Arthur; Brian Martin; Christine Wallace

doi:10.1117/12.386516

2 June 2000 Optimum design for optical proximity correction in submicron bipolar technology using critical shape error analysis

Graham G. Arthur, Brian Martin, Christine Wallace

Author Affiliations +

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386516
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A production application of optical proximity correction (OPC) aimed at reducing corner-rounding and line-end shortening is described. The methodology, using critical shape error analysis, to calculate the correct serif size is given and is extended to show the effect of OPC on the process window (i.e. depth-of-focus and exposure latitude). The initial calculations are made using the lithography simulation tools PROLITH/2 and SOLID-C, the results of which are transferred to the photo-cell for practical results.

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Graham G. Arthur, Brian Martin, and Christine Wallace "Optimum design for optical proximity correction in submicron bipolar technology using critical shape error analysis", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386516

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