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2 June 2000 Phase profilometry for the 193-nm lithography gate stack
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Abstract
Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nickhil H. Jakatdar, Xinhui Niu, Junwei Bao, Costas J. Spanos, Sanjay K. Yedur, and Alain G. Deleporte "Phase profilometry for the 193-nm lithography gate stack", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386464
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