Phase profilometry for the 193-nm lithography gate stack

Nickhil H. Jakatdar; Xinhui Niu; Junwei Bao; Costas J. Spanos; Sanjay K. Yedur; Alain G. Deleporte

doi:10.1117/12.386464

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2 June 2000 Phase profilometry for the 193-nm lithography gate stack

Nickhil H. Jakatdar, Xinhui Niu, Junwei Bao, Costas J. Spanos, Sanjay K. Yedur, Alain G. Deleporte

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Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386464
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.

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Nickhil H. Jakatdar, Xinhui Niu, Junwei Bao, Costas J. Spanos, Sanjay K. Yedur, and Alain G. Deleporte "Phase profilometry for the 193-nm lithography gate stack", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386464

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