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2 June 2000 Pitch-dependent intrafield dimensional offsets in advanced lithography
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Abstract
The variation of dimensional control between center and edge of a stepper lens field is measured both practically and by lithography simulation for both lines and slots at various pitches. Results for lines show that the sign of the center- edge offset is pitch dependent but for slots the dimension is always larger at center field irrespective of pitch.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine Wallace, Brian Martin, and Graham G. Arthur "Pitch-dependent intrafield dimensional offsets in advanced lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386519
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