Paper
2 June 2000 Process-induced defects in sub-0.15-nm device patterning using 193-nm lithography
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Abstract
Process induced defects in sub-0.15 micrometer devices patterned on 193-nm photoresists have been studied and related to the physical and rheological properties of these polymers, as well as to the interaction of the photoresists with the two principal track-related unit operations: spin-coating and development. Studies on unpatterned wafers with these photoresists were conducted to elucidate the dependence of defectivity and defect types on spin coating parameters. Imaging was done on a full-field ASML 193 nm scanner and the resist processing was performed on a TEL MARK-8 track. Defect inspection was performed with a KLA 2132, KLA SP1 bright field inspection systems, and defect review was carried out with JEOL 7515 SEM tool. Results indicate that defectivity of an optimized 193-nm resist process is comparable to a well- optimized 248-nm baseline resist process. It was found that 193-nm resists suffer from the same residue problems as those of 248-nm. Yield data obtained on 193-nm and 248-nm resists processed under optimized conditions demonstrate that the 193- nm resist process is capable performance comparable to that of a baseline 248-nm resist process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uzodinma Okoroanyanwu, Christopher Pike, and Harry J. Levinson "Process-induced defects in sub-0.15-nm device patterning using 193-nm lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386482
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KEYWORDS
Photoresist processing

Polymers

Photoresist materials

Semiconducting wafers

Lithography

Scanning electron microscopy

Photoresist developing

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