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2 June 2000 Re-evaluating simple lambda-based design rules for low-K1 lithography process control
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Abstract
Due to the continuing decrease of the Rayleigh lithographic K1 factor used in advanced semiconductor technology, the non- linearity between designed and printed circuit images continues to increase. This increasing non-linearity has significant implications for the layout design rules with advanced technology. Recently, industry pundits have speculated that lithographic K1 factors can go far below current value. This paper aims to understand the impact of low K1 lithography upon a set of basic, company independent, layout design rules, the lambda based rules proposed by Mead and Conway. The results show that even with the use of aggressive optical proximity correction (OPC) techniques, significant changes in layout design rules will have to be made in order to extend lithographic capability to the low K1 regime.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Postnikov, Kevin D. Lucas, Bernard J. Roman, and Karl Wimmer "Re-evaluating simple lambda-based design rules for low-K1 lithography process control", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386458
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