23 June 2000 Approach for VUV positive resists using photodecomposable polymers
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We investigated characteristics of resists consisting of well- known resist polymers by the F2 excimer laser exposure. Negative-resist behavior due to crosslinking or decarboxylation was observed for poly(p-hydroxystyrene) based resists, polysilsesquioxane based resists and polynorbornenecarboxylate based resists. On the other hand, polymethacrylate based resists indicated a clear positive- resist behavior with high contrast without crosslinking. Therefore we studied further details of the characteristics of resists consisting of photodecomposable polymers such as methacrylate polymers and found methacrylate polymers bearing alicyclic groups to be resist with high dissolution contrast and little outgassing. The 200 nm L/S pattern with vertical profile at 1000 angstrom thickness was obtained by F2 excimer laser contact exposure in spite of poor transmittance of 30% per 1000 angstrom thickness. It was showed that the resolution by a 157 nm scanner with the lens of NA0.7/(sigma) 0.7 was 70 nm L/S and 40 nm iso-line at 1000 angstrom thickness by PROLITH/3D lithography simulator using experimental parameters.
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Shinji Kishimura, Shinji Kishimura, Akiko Katsuyama, Akiko Katsuyama, Masaru Sasago, Masaru Sasago, Masamitsu Shirai, Masamitsu Shirai, Masahiro Tsunooka, Masahiro Tsunooka, } "Approach for VUV positive resists using photodecomposable polymers", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388318; https://doi.org/10.1117/12.388318

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