23 June 2000 Chemically amplified resists based on norbornene polymer with 2-trimethylsilyl-2-propyl ester protecting group
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Abstract
New silicon-containing polymers, poly{5-[(2- trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co-maleic anhydride} [poly(TMSPN-co-MA)] and poly{5- [(2-trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co- maleic anhydride-co-2-tri-methylsilyl-2-propyl methacrylate}, were synthesized for dually developable chemically amplified resists. The polymers exhibited relatively good transmittances at 193 nm and have good thermal stability up to 190 degrees Celsius. Poly(TMSPN-co-MA) was evaluated as a resist for ArF excimer laser lithography. 0.18 micrometer line and space patterns were obtained at a dose of 11 mJ/cm2 using the conventional wet developer with an ArF excimer laser stepper. 1 micrometer line and space patterns were obtained using dry development process with O2 reactive ion etching.
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Jin-Baek Kim, Jin-Baek Kim, Jae-Jun Lee, Jae-Jun Lee, Jae-Sung Kang, Jae-Sung Kang, } "Chemically amplified resists based on norbornene polymer with 2-trimethylsilyl-2-propyl ester protecting group", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388271; https://doi.org/10.1117/12.388271
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