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23 June 2000 Cycloolefin-maleic anhydride copolymers for 193-nm resist compositions
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Cycloolefin/maleic anhydride systems are a favorable approach to dry etch resistant resists for 193 nm lithography. This paper reports on poly(BNC/HNC/NC/MA) tetrapolymers, from t- butylnorbornene carboxylate (BNC), hydroxyethyl-norbornene carboxylate (HNC), norbornene carboxylic acid (NC) and maleic anhydride (MA). It was found that moisture has to be excluded in the synthesis of these systems if reproducible results are to be obtained. Lithographic evaluation of an optimized, modified polymer has shown linear isolated line resolution down to 100 nm using conventional 193 nm illumination. Possible reactions of the alcohol and anhydride moieties are discussed, and the effect of the anhydride unit on polymer absorbance is discussed using succinnic anhydride as a model compound.
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M. Dalil Rahman, Jun-Bom Bae, Michelle M. Cook, Dana L. Durham, Takanori Kudo, Woo-Kyu Kim, Munirathna Padmanaban, and Ralph R. Dammel "Cycloolefin-maleic anhydride copolymers for 193-nm resist compositions", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000);

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