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23 June 2000 Design and synthesis of new photoresist materials for ArF lithography
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A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether- maleic anhydride alternating copolymers and acrylate derivatives with bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, these resists showed a good adhesion to the substrate, high dry-etching resistance against CF4 mixture gas (1.02 times the etching rate of DUV resist) and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120 nm L/S patterns have been resolved under conventional illumination.
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Sang-Jun Choi, Hyun-Woo Kim, Sang-Gyun Woo, and Joo-Tae Moon "Design and synthesis of new photoresist materials for ArF lithography", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000);

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