23 June 2000 Improvement of resist profile roughness in bilayer resist process
Author Affiliations +
Abstract
The bi-layer resist (BLR) process, which first accomplish imaging on a thin top layer and transfer it down to a thick organic layer, is one of newly emerging patterning techniques in silicon processing. In this work, we studied the lithographic performance of the BLR process adopting FK- SPTM (Fujifilm Olin Co.) as top layer material and various organic material as bottom layer. Generally, considerable advantages of planarization, reduced substrate reflection, improved process latitude, and of enhanced resolution are achieved. However, the resolution and the process latitude are highly affected by surface interaction between the top resist and the bottom material. Moreover, the BLR process has a sidewall roughness problem related to the material factors of the resist and the degraded aerial image contrast, which can affect the reliability of the device. We found that thermal curing treatment applied after development with the consideration of the glass transition temperature are very effective in reducing the line edge roughness. More smooth and steep patterning is achieved by the thermal treatment. The linewidth controllability is below 10 nm and the k1 value is reduced from 0.5 down to 0.32 in this process. The reactive ion etching adopting O2 gas demonstrated selectivity of the top resist over bottom material more than 15:1, together with residue-free and vertical wall profile.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang-Young Jeong, Sang-Wook Ryu, Ki-Yeop Park, Won-Kyu Lee, Seung-Woog Lee, Dai-Hoon Lee, "Improvement of resist profile roughness in bilayer resist process", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388368; https://doi.org/10.1117/12.388368
PROCEEDINGS
9 PAGES


SHARE
Back to Top