Line-edge roughness of chemically amplified resists

Tsukasa Azuma; Kenji Chiba; Maki Imabeppu; Daisuke Kawamura; Yasunobu Onishi

doi:10.1117/12.388310

23 June 2000 Line-edge roughness of chemically amplified resists

Tsukasa Azuma, Kenji Chiba, Maki Imabeppu, Daisuke Kawamura, Yasunobu Onishi

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388310
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Aerial image contrast dependence of line edge roughness (LER) in 130 nm equal line and space resist patterns was investigated using chemically amplified resists on organic bottom antireflective coatings both for KrF imaging and for ArF imaging. The chemically amplified ArF resist exhibiting high transparency both at 248 nm and at 193 nm was found to resolve 130 nm equal line and space resist patterns both on the KrF imaging systems and on the ArF imaging system using an identical binary mask set. Average roughness measurement data derived from top-down scanning electron microscopic images of the 130 nm equal line and space resist patterns indicated that the LER decreased with increasing the aerial image contrast, varying with the wavelengths of illumination light sources and the illumination conditions. It was, however, found that the LER in the chemically amplified resist optimized for the ArF imaging system was 1.9 - 2.3 times larger than those in the chemically amplified resists optimized for the KrF imaging systems, in spite of the fact that the aerial image contrast of the ArF imaging system was 1.5 - 2.5 times higher than those of the KrF imaging systems.

Citation Download Citation

Tsukasa Azuma, Kenji Chiba, Maki Imabeppu, Daisuke Kawamura, and Yasunobu Onishi "Line-edge roughness of chemically amplified resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388310

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