23 June 2000 Lithography and line-edge roughness of high-activation-energy resists
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Abstract
Lithographic performance and line-edge roughness (LER) of several experimental high activation energy resists containing hydroxystyrene-co-styrene-co-t-butylmethacrylate terpolymers have been determined as a function of illumination conditions, polymer, photoacid generator and quencher composition, as well as process variations. Important lithographic properties, such as iso/dense bias, exposure latitude, may deteriorate upon minimization of LER. LER is largely affected by the changes of the optical settings, while material and process influences are less pronounced.
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Seiya Masuda, Seiya Masuda, Xiaoming Ma, Xiaoming Ma, G Noya, G Noya, Georg Pawlowski, Georg Pawlowski, } "Lithography and line-edge roughness of high-activation-energy resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388309; https://doi.org/10.1117/12.388309
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