Mechanical property of organic resists for ArF lithography

Taku Morisawa; Toshihiko P. Tanaka; Tsuneo Terasawa

doi:10.1117/12.388262

23 June 2000 Mechanical property of organic resists for ArF lithography

Taku Morisawa, Toshihiko P. Tanaka, Tsuneo Terasawa

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388262
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

We have investigated the mechanical porperty of ArF resists formed on Si substrate. We measured strength in resist film by introducing the scratch test method. Stress is also evaluated by measuring the curvature of Si wafer coated with resist. The results showed that the mechanical property of resist films mainly depends on the resist polymer structures. A half strength and 5 times large stress of typical ArF resist films comparing with KrF resist explain the observed behaviors of ArF resist such as peering or cracking in lithography process.

Citation Download Citation

Taku Morisawa, Toshihiko P. Tanaka, and Tsuneo Terasawa "Mechanical property of organic resists for ArF lithography", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388262

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