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23 June 2000 Polymers for 157-nm photoresist applications: a progress report
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Finding materials that offer the all of the characteristics required of photoresist matrix resin polymers while trying to maintain a high level of transparency at 157 nm is a daunting challenge. To simplify this task, we have broken the design of these polymers down into subunits, each of which is responsible for a required function in the final material. In addition, we have begun collecting gas-phase VUV spectra of these potential subunits to measure their individual absorbance contributions. Progress on developing materials for each of these subunits are presented along with plans for future studies.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyle Patterson, Mikio Yamachika, Raymond Jui-Pu Hung, Colin J. Brodsky, Shintaro Yamada, Mark H. Somervell, Brian Osborn, Daniel S. Hall, Gordana Dukovic, Jeff D. Byers, Will Conley, and C. Grant Willson "Polymers for 157-nm photoresist applications: a progress report", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000);

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