23 June 2000 Progress in qualifying and quantifying the airborne base sensitivity of modern chemically amplified DUV photoresists
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Abstract
Atmospheric pressure deep UV lithography using fast chemically amplified photoresists will be the mainstay of semiconductor production into the foreseeable future. Airborne base contamination of modern resists is a yield-limiting issue that has lacked quantitative correlation to resist performance. Herein, the authors discuss the affect and implications of molecular base contamination on a state-of-the-art 248 nm chemically amplified photoresist. The results of this work suggest that contamination control will become even more critical as we enter the era of low K1 factor 150 nm device production using 248 nm lithography. The experimental work that supports these conclusions was performed at IMEC, Leuven, Belgium.
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Devon A. Kinkead, Devon A. Kinkead, Monique Ercken, Monique Ercken, } "Progress in qualifying and quantifying the airborne base sensitivity of modern chemically amplified DUV photoresists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388362; https://doi.org/10.1117/12.388362
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