Paper
23 June 2000 Progressions in deep-ultraviolet bottom antireflective coatings
George E. Bailey, Nicholas K. Eib, Earnest C. Murphy
Author Affiliations +
Abstract
Deep ultraviolet (DUV) bottom anti-reflective coating (BARC)- to-resist compatibility is a key component in process optimization. In addition to the reduction of optical interference effects, BARC's also improve CD uniformity by preventing substrate contamination. However, if the BARC is not compatible with the resist, it can create adverse affects. If the acidity level of the BARC is not tuned to the resist for example, the profiles will foot or undercut, or if the BARC-to-resist developer interactions are not considered, high levels of post-develop defects will most likely occur. Etch selectivity, topography conformality and bowl/drain compatibility are other factors to consider when selecting a BARC. This paper follows the progressions of the leading DUV BARC's for Acetal-based resist systems and addresses the problems that could be encountered with implementing a BARC process. From DUV32 to the topography-conforming DUV42 and finally to the profile-enhancing DUV44, the 248 nm BARC's are continually evolving to resolve the BARC-to-resist compatibility issues.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George E. Bailey, Nicholas K. Eib, and Earnest C. Murphy "Progressions in deep-ultraviolet bottom antireflective coatings", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388256
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Etching

Silicon

Deep ultraviolet

Reflectivity

Thin film coatings

Photoresist processing

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