Recent advances in a molecular level lithography simulation

Gerard M. Schmid; Vivek K. Singh; Lewis W. Flanagin; Michael D. Stewart; Sean D. Burns; C. Grant Willson

doi:10.1117/12.388354

23 June 2000 Recent advances in a molecular level lithography simulation

Gerard M. Schmid; Vivek K. Singh; Lewis W. Flanagin; Michael D. Stewart; Sean D. Burns; C. Grant Willson

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388354
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Computer simulation of microlithography is a valuable tool for both optimization of current processes and development of advanced techniques. The capability of a computer simulation is limited by the accuracy of the physical model for the process being simulated. The post exposure bake (PEB) of a deep-ultraviolet resist is one process for which an accurate physical model does not exist. During the PEB of a deep- ultraviolet resist, mass transport of photogenerated acid allows a single acid molecule to catalyze several deprotection reactions. Unfortunately, lateral transport of acid into unexposed regions of the resist complicates control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs. Molecular level models are particularly valuable when attempting to examine mechanistic phenomena and offer the best possibility of accurately predicting lithographic performance based upon the chemical formulation of a resist. This work presents a new, molecular scale simulation of the acid generation and transport process.

Citation Download Citation

Gerard M. Schmid, Vivek K. Singh, Lewis W. Flanagin, Michael D. Stewart, Sean D. Burns, C. Grant Willson, "Recent advances in a molecular level lithography simulation", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388354; https://doi.org/10.1117/12.388354

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