23 June 2000 SiON as a panacea for KrF photolithography? Study on process optimization, substrate dependency, and delay time stability on silicon nitride and BPTEOS film
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Abstract
Silicon oxynitride film on Silicon Nitride film as an inorganic ARC has been investigated for the tighter critical dimension control. Use of SiON film as an inorganic ARC on silicon nitride film led to the better CD uniformity control reducing substrate dependency issue. Resist profiles on SiON have also been investigated on BPTEOS and on silicon nitride films. Footing on BPTEOS was removed completely by adding SiON film. It is found that SiON showed storage time limit after deposition. Five days after deposition, it showed footing profile. There must be some unknown chemistry to explain that phenomenon. Oxygen plasma applied onto the 5 dayed SiON film showed foot free profile. In the paper we will describe the CD control on Nitride by using SiON as an inorganic ARC, substrate dependence and storage time limit of SiON film.
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Jun-Sung Chun, Jun-Sung Chun, Shekhar Bakshi, Shekhar Bakshi, Stanley Barnett, Stanley Barnett, James Shih, James Shih, Shih-Ked Lee, Shih-Ked Lee, } "SiON as a panacea for KrF photolithography? Study on process optimization, substrate dependency, and delay time stability on silicon nitride and BPTEOS film", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388356; https://doi.org/10.1117/12.388356
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