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23 June 2000 Studies directed to the design and development of a high-energy implant resist
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This paper describes experiments aimed at developing a new i- line sensitive negative tone resist for high-energy implant applications. Specifically, key parameters such as outgassing, thermal stability and resolution will be addressed. The resist is targeted for implant layers ranging from 1 micrometer to 4 micrometer in thickness, with a target CD of 0.5 micrometer to 2 micrometer, respectively. It has been reported previously that negative resists display little to no outgassing when used in conventional implant systems. It is also important to note that negative resists tend not to exhibit the swelling problems seen with positive systems when exposed to organic edge bead removers. These and other benefits of negative resists will be identified and described in detail in this paper.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Warren Montgomery, PingYong Xu, PingHung Lu, Salem Methsun, Ralph R. Dammel, Nara Meyyappan, Noriyuki Kobayashi, and David Pritchard "Studies directed to the design and development of a high-energy implant resist", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000);

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