23 June 2000 Surface composition of a norbornene-maleic-anhydride-based 193-nm photoresists for different photoacid generators as determined by x-ray photoelectron spectroscopy
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Abstract
The surface composition of chemically amplified photoresists depends upon the photoacid generator used and the processing. We have used x-ray photoelectron spectroscopy to determine the surface composition of resists using four different photoacid generators: trifluoromethanesulfonate, perfluorobutanesulfonate, perfluorooctanesulfonate, and perfluorobenzenesulfonate. The fluorine in each of these PAGs was used as a tag of their presence on the surface. The surface F concentration generally increased after post- exposure bake. The F concentration tended to increase further after a short bake, but usually decreased after longer baking times. These results suggest that the surface concentration of F reflected competition between bulk diffusion of the photoacid leading to surface segregation and its volatilization.
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Henry W. Krautter, Henry W. Krautter, Francis M. Houlihan, Francis M. Houlihan, Richard S. Hutton, Richard S. Hutton, Ilya L. Rushkin, Ilya L. Rushkin, R. L. Opila, R. L. Opila, } "Surface composition of a norbornene-maleic-anhydride-based 193-nm photoresists for different photoacid generators as determined by x-ray photoelectron spectroscopy", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388298; https://doi.org/10.1117/12.388298
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