5 July 2000 0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masks
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Abstract
We report here a lithography process for 0.13 micrometers lines using a high NA 248 nm scanner and attenuated phase-shifting masks (AttPSM) employing optical proximity correction with optimized assisting features. Our current result indicate a common depth of focus of 0.5 micrometers and exposure latitude of 10 percent for lines with line/space ratios from 1:1.2 to isolated. The mask error factor with assisting feature ranges from 1.2 to 1.5 depending on the duty ratio. The line edge roughness is less than 8 nm for our current KrF resist with AttPSM. We also explore the feasibility of strong and weak quadrupole illumination for process enhancement. The results show promising potential for proximity reduction and process window enhancement. Considering practical implementation in foundry fabs, we decided to concentrate our efforts on AttPSM with annular illumination plus OPC with assisting features. Our investigation indicates that 248 nm AttPSM technology is very attractive for 0.13 micrometers device fabrication.
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Yung-Tin Chen, Yung-Tin Chen, Chia-Hui Lin, Chia-Hui Lin, Hua Tai Lin, Hua Tai Lin, Hung-Chang Hsieh, Hung-Chang Hsieh, Shinn Sheng Yu, Shinn Sheng Yu, Anthony Yen, Anthony Yen, } "0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masks", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388927; https://doi.org/10.1117/12.388927
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