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5 July 2000 130-nm KrF lithography for DRAM production with 0.68-NA scanner
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We have proposed a methodology for 130-nm DRAM patterning. We started by running a simulation to investigate the possibility of 130-nm DRAM production with KrF lithography. We optimized cell array features and isolate lines in the core circuits and peripheral circuits, corresponding to resist performance ((Delta) L). Using a half-tone phase-shift mask, off-axis illumination, and 0.68-NA KrF scanner, we found a high-performance resist of 40-nm (Delta) L that meets the requirement. Then, we screened resist samples using design of experiment. The result was a 40-nm (Delta) L positive resist that has small line edge roughness, a high- contrast resist profile, a small iso-dense bias and a low- blocking level to prevent defects. Finally, we applied this positive resist and OPC-mask to critical layers and achieved a sufficient production margin using a 0.68-NA KrF scanner.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiichi Kawamura, Kouichi Nagai, Hideyuki Kanemitsu, Yasuko Tabata, and Soichi Inoue "130-nm KrF lithography for DRAM production with 0.68-NA scanner", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);

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