5 July 2000 Advanced F2 lasers for microlithography
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Abstract
According to the SIA-Roadmap, the 157 nm wavelength of the F2 laser emission will be used for chip production with critical dimensions of 100 nm down tot eh 70 nm node. Currently al basic technologies for 157 nm lithography are under investigation and development at material suppliers, coating manufacturers, laser suppliers, lens and tool manufacturers, mask houses, pellicle manufacturers, and resist suppliers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Vogler, Uwe Stamm, Igor Bragin, Frank Voss, Sergei V. Govorkov, Gongxue Hua, Juergen Kleinschmidt, and Rainer Paetzel "Advanced F2 lasers for microlithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388991; https://doi.org/10.1117/12.388991
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