5 July 2000 Analysis of OPC features in binary masks at 193 nm
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Abstract
The effectiveness of OPC features in binary masks is characterized using rigorous 3D electromagnetic simulation and linking of the transmitted fields to SPLAT for the aerial image calculation. Scatter bars (SB) and OPC serifs are treated separately. At 193nm illumination wavelength the correction in the aerial image CD at best focus and at out- of-focus locations of 130nm isolated lines is examined in the presence of a single pair of scatter bars. The LESaerial of the aerial image is found, when placing square OPC features near the corners of the line. Data is provided on the dependence between the size and placement of the OPC scatter bars or serifs and the magnitude of the CDaerial and LESaerial corrections, and general rules of thumb regarding their design process are given. The necessity of rigorous 3D electromagnetic simulations as compared to simulations using a thin mask approximation is also assessed in each case and found to be of limited concern for binary masks.
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Konstantinos Adam, Andrew R. Neureuther, "Analysis of OPC features in binary masks at 193 nm", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389064; https://doi.org/10.1117/12.389064
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