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5 July 2000 Application of attenuated phase-shift masks to sub-0.18-μm logic patterns
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Abstract
In this work, we explore the application of attenuated phase-shift masks (APSM) to sub-0.18 micrometers logic patterning. Particular attention is paid to proximity effects and the common process corridor between dense and isolated features, a key challenge of logic-level lithography. Using PROLITH simulation, we evaluate APSM performance as a function of mask transmission and stepper illumination mode. The optimum process window was found for weak quadrupole illumination. Experimental results were obtained using a test mask consisting of sub-0.25 micrometers L/S Lbar patterns with various pitch values. We compared the case of a 6 percent APSM mask with weak quadrupole illumination to a standard chrome mask with conventional illumination. Properly optimized, APSM can add significant process latitude for sub-0.18micrometers logic features and may enable 130 nm logic node lithography on standard 248 nm exposure tools.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Fritze, Peter W. Wyatt, David K. Astolfi, Paul Davis, Andrew V. Curtis, Douglas M. Preble, Susan G. Cann, Sandy Denault, David Y. Chan, Joe C. Shaw, Neal T. Sullivan, Robert Brandom, and Martin E. Mastovich "Application of attenuated phase-shift masks to sub-0.18-μm logic patterns", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388955
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