5 July 2000 Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning
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Proceedings Volume 4000, Optical Microlithography XIII; (2000); doi: 10.1117/12.388974
Event: Microlithography 2000, 2000, Santa Clara, CA, United States
Abstract
In this study, 2PSM and 3PSM are implemented to print low- duty-ratio self-aligned contact plugs. The simulation and experimental results demonstrate that 2PSM has larger process windows than 3PSM. One of the advantages of 2PSM is no asymmetric defocus effect, which is caused by the phase difference of 3PSM and reduces the process window of 3PSM. Defocus-dependent shape distortion in the case of 3PSM is not found in the case of 2PSM, either. Different illumination conditions have been investigated to determine the best illumination condition for 2PSM in terms of large common process window besides less x-y distortion. Optimum illumination parameters and suitable scattering bars can minimize pattern distortion.
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Kuei-Chun Hung, Benjamin Szu-Min Lin, Hsien-an Chang, Alex Tseng, Lien-Sheng Chung, WeiJyh Liu, Der-Yuan Wu, Peter Huang, "Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388974; https://doi.org/10.1117/12.388974
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KEYWORDS
Distortion

Printing

Optical lithography

Photomasks

Critical dimension metrology

Etching

Phase shifts

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