5 July 2000 Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process
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Abstract
To enhance the depth-of-focus (DOF) of isolated lines, we have developed a new method using multiple-focus exposure in the negative-tone resist process. Experiments were performed using a KrF scanner by giving a tilt offset between the image focal plane and the wafer leveling plane along the scan direction. Using this new method, we obtained 0.75- micrometers DOF for a 180-nm isolate line, which was much larger than that in the conventional exposure. Furthermore, we evaluated the common DOF for 180-nm lines having five different pitches. Our method improved the DOF of not only isolated lines but also lines having various pitches.
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Masashi Fujimoto, Tamio Yamazaki, Takeo Hashimoto, "Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388946; https://doi.org/10.1117/12.388946
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