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5 July 2000 Effect of real masks on wafer patterning
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In this paper we present results comparing design, mask images and wafer images for a variety of features. By extracting the outline of the actual mask pattern we can use simulations to evaluate the relative contribution of mask pattern we effects to the overall wafer proximity effects. Although the actual patterns on the mask were measurable different from the design it was found that the differences between the aerial images simulated using mask images and the original design were quite similar. As a result of this study we propose that comparison of aerial images between design and actual mask patterns be used as the best method of characterizing OPC reticles.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Spence, Ramkumar Subramanian, David Teng, and Ernesto Gallardo "Effect of real masks on wafer patterning", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);

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